Sapphire Fabrication Processes

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- 2-in, 3-in, 4-in, 6-in

- High quality c-phase, r-phase,a-phase, and m-phase, crystal substrates

- Atomic level flatness

- Precise control of tilt & misorientation

- Low contamination & low Particulate counts under 0.3 micrometers

- Polarity control

- Contorolled geometry for low GBIR/SBIR in large diameter substrates enabling to provide high throughput on lithography followed by etching processes.


Lattice Planec c(0001)	r(-1012)	Lattice Plane a(11-20)	m(10-10)

Fabrication

Hi-Quality Single Crystal Based on device applications we select appropriate crystal grades and phase orientations, followed by checking crystal defects focused on etch pits, micro bubbles, impurities, polytype crystalline, and dislocation, and finally move to ingot fabrication OD and Edge grinding with state-of-the art XRD.
Wire sawing A process which may affect entire fabrication processes. We use state-of-the art wire materials and wire saw equipment enabling to provide as thinn, as less warp , and as less generating dislocations and modified layer as possible.
Heat Treatment (PTC Patent Pending) With high vacuum and high temperature annealing, that can reduce physically warp or bow, and provide atomic level flatness, clean off polishing damages, and step / terace configuration by controlling temperature and gas flow. Our unique heat treatment processes are collaboration work with a National Research Institute.
Surface Morphology and Polarity We focus on atomic level surface morphology, misorientation, and presize polarity control, that can contoribute a throughput boosting up in our epitaxial growth customers.