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| Nitride Semiconductor Single Crystal Sapphire Substrate |
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- 2, 3, 4, and 6-inch |
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- High quality c-phase, r-phase,a-phase, and m-phase, crystal substrates |
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- Atomic level flatness |
| - Precise control of misorientation |
| - Low contamination & low Particulate counts under 0.3 micrometers |
| - Polarity control |
| - Low TTV providing high throughput for lithography |
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Lattice Planec c(0001) |
r(-1012) |
Lattice Plane a(11-20) |
m(10-10) |
| Fabrication |
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Single Crystal
Select methdologies of crystal growth for specific devices and applications.
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Wire sawing
A process which may affect following fabrication processes. We use state-of the art wire saw enabling to provide as thinn,
as less warp , and as less generating dislocations and modified layer as possible.
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Heat Treatment (Patent Pending)
With high vacuum and high temperature annealing, that can reduce physically warp or bow,
and provide atomic level flatness, clean off polishing damages, and step / terace
configuration by controlling temperature and gas flow. Our unique
heat treatment processes are collaboration work with Research Institute.
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Surface Morphology and Polarity
We focus on atomic level surface morphology, misorientation, and presize polarity control, that may affect epitaxial growth. |
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| Fiber Optics Products |
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| ● F-dope Step-index Preforms/Fibers |
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● ＵＶ、ＩＲ Laser, Spectroscopy, Hi-voltage Transmission
Medical and electronics applications.
Available for customized preforms and fibers for the core materials, cladding
materials, cladding thickness, single or double clad, and NA. |
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Copyright（C）2003 Inter Optec Co., Ltd. All Rights Reserved.
Copyright（C）2003 Inter Optec Co., Ltd. All Rights Reserved. |
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