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We provide atomic level flatness, step and terrace configuration, polarity and misorientation controlled wafers.
Services
To meet customers' versatile requirements:
Crystal Quality, Well Controlled Phase Orientation and Off-Set Angle Polarity.
Phase Orientation
　　　C（0001）+/- 0.1 for LEDs
　　　C（0001）+/- 0.05 for LDs, HEMT, other GaN devices.
　　 A cut phase orientation: c(0001), a(11-20), m(10-10) and r(-1012) with specific off-set angle.
Quality Assurance
　　　Crystal impurities：Certificate of Analysis attached
　　　Fabrication: Certificate of Compliance
Sampling standard：MIL-STD-105E, 5 out of 25 wafers
  • 　Diameter
  • 　Thickness （5-TV points）
  • 　OF length
  • 　TTV（Within indivisual wafer and between production batch）
  • 　SORI（ Free standing)
  • 　Backsurface roughness
  • 　 Particulates
Surface Analysis
Single Crystal ： Reflection High Energy Electron Diffraction(RHEED)
Rocking curve： Peak and width configuration, omega/2theta FWHM
Latice strain at sub-surface、SORI, dislocation： Lang X-ray  topograph                                                                                      
Surface roughness：
   Atomic force microscope AFM: tapping mode: 5 - microns Scan  Ra/P-V                                                                              
  • Step & Terrace：AFM
  • Backsurface Roughness：Contact mode surfcoder
  • Heat Shock Resistance： Heat cycle and quenching
  • Surface Contamination
  • Heavy Metals：TXRF
  • Carbide, Fluoride, Hydroxide：XPS
  • Transparency
  • Stoichiometry：XPS
  • Paticulates, defects, stains

　
 
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