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High Brightness LED(Light Emitting Diode) for visible light through NUV and DUV, LD(Laser Diode), HEMT(High Electron Mobility Transistor), SoS(Silicon on Sapphire), various kinds of Sensor utilizing resistant to hi-temp and corrosive gasses, and support wafers for free-standing epitaxial growth, our sapphire substrtaes are well conforming to wide range of applications with conventional c-plane as well as semi and non polar m-plane, a-plane and r-plane providing atomic level flatness, step and terrace configuration, convex and concave geometry, polarity, precise tilt and misorientation controll, and XPS level ultra clean surface. |
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| Services |
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To meet customers' versatile requirements:
Crystal Quality, Well Controlled Phase Orientation and Off-Set Angle Polarity. |
| Phase Orientation |
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| Standard C(0001)+/- 0.1 for LEDs |
| C(0001)+/- 0.05 for LDs, HEMT, other GaN devices. |
| A cut phase orientation: c(0001), a(11-20), m(10-10) and r(-1012) with specific off-set angle. |
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| Quality Assurance |
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| Crystal impurities:Certificate of Analysis attached |
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| Sampling standard:MIL-STD-105E, 5 out of 25 wafers |
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- GBIR/SBIR(ex-TTV Within indivisual wafer and between production batch)
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| Surface Analysis |
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- Single Crystal : Reflection High Energy Electron Diffraction(RHEED)
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- Rocking curve: Peak and width configuration, omega/2theta FWHM
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- Latice strain at sub-surface、Curveture, Dslocation: Density : Lang X-ray topograph
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- Surface roughness:
Atomic force microscope (AFM): tapping mode: 5 - microns Scan
Ra & P-V
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- Backsurface Roughness:Contact mode surfcoder
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- Heavy Metals Rsidueals:TXRF
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- Carbide, Fluoride, Hydroxide:XPS
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- Paticulates, defects, stains (Optional)
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